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PMDXB600UNEZ Field Effect Transistor Transistors FETs MOSFETs Arrays

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PMDXB600UNEZ Field Effect Transistor Transistors FETs MOSFETs Arrays

Part Number : PMDXB600UNEZ

Manufacturer : Nexperia USA Inc.

Description : MOSFET 2N-CH 20V 0.6A 6DFN

Category : Transistors - FETs, MOSFETs - Arrays

Family : Transistors - FETs, MOSFETs - Arrays

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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PMDXB600UNEZ Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 600mA
Rds On (Max) @ Id, Vgs 620 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V
Power - Max 265mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

PMDXB600UNEZ Packaging

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PMDXB600UNEZ Field Effect Transistor Transistors FETs MOSFETs ArraysPMDXB600UNEZ Field Effect Transistor Transistors FETs MOSFETs ArraysPMDXB600UNEZ Field Effect Transistor Transistors FETs MOSFETs ArraysPMDXB600UNEZ Field Effect Transistor Transistors FETs MOSFETs Arrays


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